Počet záznamov: 1
Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
Názov Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes Autor Donoval D. Spoluautori Chvála A. Šramatý R. Kováč Jaroslav Carlin J.-F. Grandjean N. Pozzovivo G. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Pogany D. Strasser G. Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Zdroj.dok. Applied Physics Letters. Vol. 96, (2010), 223501 Jazyk dok. eng - angličtina Krajina US - Spojené štáty Druh dok. rozpis článkov z periodík (rbx) Ohlasy SONG, J. - XU, F.J. - YAN, X.D. - LIN, F. - HUANG, C.C. - YOU, L.P. - YU, T.J. - WANG, X.Q. - SHEN, B. - WEI, K. - LIU, X.Y. In APPLIED PHYSICS LETTERS. DEC 6 2010, vol. 97, no. 23. MAO, W. - YANG, C. - HAO, Y. - ZHANG, J.C. - LIU, H.X. - BI, Z.W. - XU, S.R. - XUE, J.S. - MA, X.H. - WANG, C. - YANG, L.A. - ZHANG, J.F. - KUANG, X.W. In CHINESE PHYSICS B. JAN 2011, vol. 20, no. 1. EJDERHA, K. - ZENGIN, A. - ORAK, I. - TASYUREK, B. - KILINC, T. - TURUT, A. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. MAR 2011, vol. 14, no. 1, p. 5-12. CHEN, Z.T. - FUJITA, K. - ICHIKAWA, J. - EGAWA, T. In IEEE ELECTRON DEVICE LETTERS. MAY 2011, vol. 32, no. 5, p. 620-622. Rafei, A.E. Callet, G., Mouginot, G., Faraj, J., Laurent, S., Prigent, M., Quere, R., Jardel, O., Delage, S. In EuMW 2011 , art. no. 6102856 , pp. 5-8 GANGULY, S. - KONAR, A. - HU, Z.Y. - XING, H.L. - JENA, D. In APPLIED PHYSICS LETTERS. DEC 17 2012, vol. 101, no. 25. XUE, J.S. - ZHANG, J.C. - ZHANG, K. - ZHAO, Y. - ZHANG, L.X. - MA, X.H. - LI, X.G. - MENG, F.N. - HAO, Y. In JOURNAL OF APPLIED PHYSICS. JUN 1 2012, vol. 111, no. 11. MINJ, A. - CAVALCOLI, D. - CAVALLINI, A. In NANOTECHNOLOGY. MAR 23 2012, vol. 23, no. 11. HAHN, H. - REUTERS, B. - KALISCH, H. - VESCAN, A. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. JUL 2013, vol. 28, no. 7, SI. MAO, W. - HAO, Y. - YANG, C. - ZHANG, J.C. - MA, X.H. - WANG, C. - LIU, H.X. - YANG, L.A. - ZHANG, J.F. - ZHENG, X.F. - ZHANG, K. - CHEN, Y.H. - YANG, L.Y. In CHINESE PHYSICS LETTERS. MAY 2013, vol. 30, no. 5. KIM, S. - RYOU, J.H. - DUPUIS, R.D. - KIM, H. In APPLIED PHYSICS LETTERS. FEB 4 2013, vol. 102, no. 5. KYAW, L.M. - LIU, Y. - BERA, M.K. - NGOO, Y.J. - TRIPATHY, S. - CHOR, E.F. In WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 14. 2013, vol. 53, no. 2, p. 75-83. KYAW, L.M. - DOLMANAN, S.B. - BERA, M.K. - LIU, Y. - TAN, H.R. - BHAT, T.N. - DIKME, Y. - CHOR, E.F. - TRIPATHY, S. In ECS SOLID STATE LETTERS. 2014, vol. 3, no. 2, p. Q5-Q8. REN, J. - YAN, D.W. - YANG, G.F. - WANG, F.X. - XIAO, S.Q. - GU, X.F. In JOURNAL OF APPLIED PHYSICS. APR 21 2015, vol. 117, no. 15. GEUM, D.M. - SHIN, S.H. - HONG, S.M. - JANG, J.H. In IEEE ELECTRON DEVICE LETTERS. APR 2015, vol. 36, no. 4, p. 306-308. MAHALA, P. - BEHURA, S.K. - DHANAVANTRI, C. - RAY, A. - JANI, O. In APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. MAR 2015, vol. 118, no. 4, p. 1459-1468. WU, Y.F. - DEL ALAMO, J.A. In IEEE TRANSACTIONS ON ELECTRON DEVICES. SEP 2016, vol. 63, no. 9, p. 3487-3492. MUDUSU, D. - NANDANAPALLI, K.R. - DUGASANI, S.R. - KARUPPANNAN, R. - REDDY, G.K.R. - SUBRAMANIAN, R.G.E. - PARK, S.H. In RSC ADVANCES. 2017, vol. 7, no. 18, p. 11111-11117. POLYAKOV, A.Y. - SMIRNOV, N.B. - SHCHEMEROV, I.V. - YANG, J.C. - REN, F. - LO, C.F. - LABOUTIN, O. - JOHNSON, J.W. - PEARTON, S.J. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2018, vol. 7, no. 2, p. Q1-Q7. MOJAVER, H.R. - VALIZADEH, P. Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler-Nordheim and Leakage at Mesa Sidewalls. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3156-3162. SASANGKA, W.A. - GAO, Y. - GAN, C.L. - THOMPSON, C.V. Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. In MICROELECTRONICS RELIABILITY. SEP 2018, vol. 88-90, SI, p. 393-396. WU, M. - HAO, Y. - ZHU, Q. - YANG, L. - MA, X.H. Analysis of Schottky Forward Current Transport Mechanisms in AlGaN/GaN HEMTs over a Wide Temperature Range. In 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). 2018, p. 79-+. BELLAMKONDA, V. S. Santhosh N. Varma - BHUNIA, Swagato - SARKAR, Ritam - GHOSH, Kankat - LAHA, Apurba. Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n(+)-GaN Schottky characteristics. In MATERIALS RESEARCH EXPRESS, 2019, vol. 6, no. 10, pp. JANG, J. - SONG, J. - LEE, S.S. - JEONG, S. - LEE, B.J. - KIM, S. Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, AUG 15 2021, vol. 131. ZHANG, T. - LI, R.H. - ZHANG, Y.N. - SU, H.K. - ZHANG, W.H. - DUAN, X.L. - ZHANG, J.C. - XU, S.R. - LV, Y.G. - HAO, Y. Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, JUN 6 2022, vol. 120, no. 23. Dostupné na: https://doi.org/10.1063/5.0087736. ZHANG, T. - ZHANG, Y.N. - LI, R.H. - LU, J. - SU, H.K. - XU, S.R. - SU, K. - DUAN, X.L. - LV, Y.G. - ZHANG, J.C. - HAO, Y. Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, FEB 28 2022, vol. 120, no. 9. Dostupné na: https://doi.org/10.1063/5.0077691. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2010 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1063/1.3442486 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 3.554 2.826 Q1
Počet záznamov: 1