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Investigation of deep energy levels in heterostructures based on GaN by DLTS
Názov Investigation of deep energy levels in heterostructures based on GaN by DLTS Autor Stuchlíková Ľ. Spoluautori Šebok J. Rybár J. Petrus M. Nemec M. Harmatha L. Benkovská J. Kováč Ján Škriniarová Jaroslava Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Paskiewicz R. Tlaczala M. Zdroj.dok. ASDAM 2010 : proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems. P. 135-138. - Piscataway : IEEE, 2010 / Breza J. ; Donoval D. ; Vavrinský E. Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rzb) Ohlasy GOSWAMI, Arunesh - TREW, Robert J. - BILBRO, Griff L. In IEEE TRANSACTIONS ON ELECTRON DEVICES. APR 2014, vol. 61, no. 4, p. 1014-1021. ANAND, M.J. - NG, G.I. - ARULKUMARAN, S. - SYAMAL, B. - ZHOU, X. In APPLIED PHYSICS EXPRESS. OCT 2015, vol. 8, no. 10. DIVAY, A. - MASMOUDI, M. - LATRY, O. - DUPERRIER, C. - TEMCAMANI, F. In MICROELECTRONICS RELIABILITY. AUG-SEP 2015, vol. 55, no. 9-10, p. 1703-1707. Divay, A., Latry, O., Duperrier, C., Temcamani, F. Journal of Semiconductors 37 (2016), 014001 ZHENG, X. - FENG, S.W. - ZHANG, Y.M. - YANG, J.W. In MICROELECTRONICS RELIABILITY. AUG 2016, vol. 63, p. 46-51. DIVAY, A. - MASMOUDI, M. - LATRY, O. - DUPERRIER, C. - TEMCAMANI, F. - EUDELINE, P. In 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON). 2016. MENEGHESSO, G. - MENEGHINI, M. - SILVESTRI, R. - VANMEERBEEK, P. - MOENS, P. - ZANONI, E. In JAPANESE JOURNAL OF APPLIED PHYSICS. JAN 2016, vol. 55, no. 1, SI. ROSSETTO, I. - BISI, D. - DE SANTI, C. - STOCCO, A. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. In POWER GAN DEVICES: MATERIALS, APPLICATIONS AND RELIABILITY. 2017, p. 197-236. DE SANTI, C. - MENEGHINI, M. - MENEGHESSO, G. - ZANONI, E. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications. In IET POWER ELECTRONICS. APR 10 2018, vol. 11, no. 4, SI, p. 668-674. JABBARI, I. - BAIRA, M. - MAAREF, H. - MGHAIETH, R. C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps. In PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. OCT 2018, vol. 104, p. 216-222. ZHENG, X. - FENG, S.W. - ZHANG, Y.M. - LI, X. - BAI, K. Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient. In IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. SEP 2019, vol. 19, no. 3, p. 509-513. CARIA, A. - DE SANTI, C. - ZAMPERETTI, F. - HUANG, X. - FU, H. - CHEN, H. - ZHAO, Y. - NEVIANI, A. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, NOV 2020, vol. 114, SI. CARIA, A. - DE SANTI, C. - DOGMUS, E. - MEDJDOUB, F. - ZANONI, E. - MENEGHESSO, G. - MENEGHINI, M. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. In ELECTRONICS. NOV 2020, vol. 9, no. 11. CARIA, A. - DE SANTI, C. - ZAMPERETTI, F. - HUANG, X.Q. - FU, H.Q. - CHEN, H. - ZHAO, Y.J. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. In GALLIUM NITRIDE MATERIALS AND DEVICES XV. ISSN 0277-786X, 2020, vol. 11280. MENEGHINI, M. - DE SANTI, C. - ABID, I. - BUFFOLO, M. - CIONI, M. - KHADAR, R.A. - NELA, L. - ZAGNI, N. - CHINI, A. - MEDJDOUB, F. - MENEGHESSO, G. - VERZELLESI, G. - ZANONI, E. - MATIOLI, E. GaN-based power devices: Physics, reliability, and perspectives. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, NOV 8 2021, vol. 130, no. 18. REMESH, N. - CHANDRASEKAR, H. - VENUGOPALRAO, A. - RAGHAVAN, S. - RANGARAJAN, M. - NATH, D.N. Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, AUG 21 2021, vol. 130, no. 7. PUTCHA, V. - CHENG, L. - ALIAN, A. - ZHAO, M. - LU, H. - PARVAIS, B. - WALDRON, N. - LINTEN, D. - COLLAERT, N. On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. In 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). ISSN 1541-7026, 2021. BUFFOLO, M. - CARIA, A. - PIVA, F. - ROCCATO, N. - CASU, C. - DE SANTI, C. - TRIVELLIN, N. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. Defects and Reliability of GaN-Based LEDs: Review and Perspectives. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, APR 2022, vol. 219, no. 8. Dostupné na: https://doi.org/10.1002/pssa.202100727. MUKHERJEE, J. - CHAUBEY, R.K. - RAWAL, D.S. - DHAKA, R.S. Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, JAN 2022, vol. 137. Dostupné na: https://doi.org/10.1016/j.mssp.2021.106222. Kategória AEC - Vedecké práce v zahraničných recenzovaných vedeckých zborníkoch (aj konferenčných), monografiách Kategória (od 2022) V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka Typ výstupu príspevok Rok vykazovania 2010 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010
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