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Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C
Názov Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C Autor Babchenko Oleg 1983 SAVELEK - Elektrotechnický ústav SAV Spoluautori Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Gerboc Michal SAVELEK - Elektrotechnický ústav SAV Izsák Tibor ORCID Vojs M. Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV Kromka A. Zdroj.dok. Diamond and Related Materials. Vol. 89 (2018), p. 266-272 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy SIDDIQUE, Anwar - AHMED, Raju - ANDERSON, Jonathan - NAZARI, Mohammad - YATES, Luke - GRAHAM, Samuel - HOLTZ, Mark - PINER, Edwin L. Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD. In ACS APPLIED ELECTRONIC MATERIALS. ISSN 2637-6113, 2019, vol. 1, no. 8, pp. 1387-1399. ZHU, T. - ZHENG, X.F. - CAO, Y.R. - WANG, C. - MAO, W. - WANG, Y.Z. - MI, M.H. - WU, M. - MO, J.H. - MA, X.H. - HAO, Y. Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAY 2020, vol. 35, no. 5. TIJENT, Fatima Zahrae - FAQIR, Mustapha - CHOUIYAKH, Hajar - ESSADIQI, El Hachmi. Review-Integration Methods of GaN and Diamond for Thermal Management Optimization. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, vol. 10, no. 7, pp. ISSN 2162-8769. Dostupné na: https://doi.org/10.1149/2162-8777/ac12b3. SOBASZEK, Michal - GNYBA, Marcin - KULESZA, Slawomir - BRAMOWICZ, Miroslaw - KLIMCZUK, Tomasz - BOGDANOWICZ, Robert. Boron-Doped Diamond/GaN Heterojunction-The Influence of the Low-Temperature Deposition. In MATERIALS, 2021, vol. 14, no. 21, pp. Dostupné na: https://doi.org/10.3390/ma14216328. ZHENG, Y.T. - ZHANG, Q.R. - QIAO, G.Z. - WEI, J.J. - LIU, J.L. - CHEN, L.X. - AN, K. - ZHANG, X.T. - YE, H.T. - ZHOU, H.J. - TAO, H.L. - YIN, Y.H. - OUYANG, X.P. - LI, C.M. Preparation strategy for low-stress and uniform SiC-on-diamond wafer: A silicon nitride dielectric layer. In CERAMICS INTERNATIONAL. ISSN 0272-8842, DEC 15 2022, vol. 48, no. 24, p. 36441-36449. Dostupné na: https://doi.org/10.1016/j.ceramint.2022.08.204. YANG, C. - WANG, J. - MA, D.Z. - LI, Z.Q. - HE, Z.Y. - LIU, L.H. - FU, Z.W. - YANG, J.Y. Phonon transport across GaN-diamond interface: The nontrivial role of pre-interface vacancy-phonon scattering. In INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER. ISSN 0017-9310, NOV 1 2023, vol. 214. Dostupné na: https://doi.org/10.1016/j.ijheatmasstransfer.2023.124433. WANG, Y.N. - HU, X.F. - GE, L. - LIU, Z.H. - XU, M.S. - PENG, Y. - LI, B. - YANG, Y.Q. - LI, S.Q. - XIE, X.J. - WANG, X.W. - XU, X.A. - HU, X.B. Research Progress in Capping Diamond Growth on GaN HEMT: A Review. In CRYSTALS. MAR 2023, vol. 13, no. 3. Dostupné na: https://doi.org/10.3390/cryst13030500. ABDULLAH, M.F. - HUSSIN, M.R.M. - ISMAIL, M.A. - SABLI, S.K.W. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, MAR 15 2023, vol. 273. Dostupné na: https://doi.org/10.1016/j.mee.2023.111958. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2018 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.diamond.2018.09.014 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.232 Q2 0.686 Q1
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