Počet záznamov: 1
Self-heating in GaN transistors designed for high-power operation
Názov Self-heating in GaN transistors designed for high-power operation Autor Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV Molnár M. Donoval D. Fleury C. Pogany D. Strasser G. Hilt O. Brunner F. Würfl H.-J. Zdroj.dok. IEEE Transactions on Electron Devices. Vol. 61, (2014), p. 3429-3434 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy RODRIGUEZ, R. - GONZALEZ, B. - GARCIA, J. - YIGLETU, F.M. - TIRADO, J.M. - INIGUEZ, B. - NUNEZ, A. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. MAY 2015, vol. 212, no. 5, SI, p. 1130-1136. NAZARI, M. - HANCOCK, B.L. - PINER, E.L. - HOLTZ, M.W. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAY 2015, vol. 62, no. 5, p. 1467-1472. ZHAO, X.D. - XU, R.M. - XU, Y.H. In 2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP). 2015, p. 261-263. NAGAHISA, T. - ICHIJOH, H. - SUZUKI, T. - YUDIN, A. - ADAN, A.O. - KUBO, M. In JAPANESE JOURNAL OF APPLIED PHYSICS. APR 2016, vol. 55, no. 4, SI. NAZARI, M. - HANCOCK, B.L. - ANDERSON, J. - SAVAGE, A. - PINER, E.L. - GRAHAM, S. - FAILI, F. - OH, S. - FRANCIS, D. - TWITCHEN, D. - HOLTZ, M. In APPLIED PHYSICS LETTERS. JAN 18 2016, vol. 108, no. 3. AHMEDA, K. - UBOCHI, B. - BENBAKHTI, B. - DUFFY, S.J. - SOLTANI, A. - ZHANG, W.D. - KALNA, K. In IEEE ACCESS. 2017, vol. 5, p. 20946-20952. GUO, H.X. - KONG, Y.C. - CHEN, T.S. In DIAMOND AND RELATED MATERIALS. MAR 2017, vol. 73, p. 260-266. PETITDIDIER, S. - GUHEL, Y. - BROCERO, G. - EUDELINE, P. - TROLET, J.L. - MARY, P. - GAQUIERE, C. - BOUDART, B. In IEEE TRANSACTIONS ON NUCLEAR SCIENCE. AUG 2017, vol. 64, no. 8, 1, p. 2284-2291. KUMAR, Pradeep - KUMARRAIPUT, Sachin - MISHRA, Akshay - RAWAL, Udit - SHARMA, Lipika. Simulation of Self-Heating Effect for Different Gate Lengths and its Influence on DC Characteristics of AlGaN/GaN HEMT. In Proceedings of the 8th International Conference Confluence 2018 on Cloud Computing, Data Science and Engineering, Confluence 2018, 2018-08-20, pp. 880-883. PIOTROWICZ, S. - JACQUET, J.C. - GAMARRA, P. - PATARD, O. - DUA, C. - CHARTIER, E. - MICHEL, N. - OUALLI, M. - LACAM, C. - POTIER, C. - ALTUNTAS, P. - DELAGE, S. InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. In INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES. FEB 2018, vol. 10, no. 1, SI, p. 39-46. FEGHHI, R. - JOODAKI, M. Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies. In INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. OCT 2018, vol. 28, no. 8. JARNDAL, Anwar. GaN HEMT Electrothermal Modeling Using Feedback Neural Networks Technique. In 2019 International Conference on Electrical and Computing Technologies and Applications, ICECTA 2019, 2019-11-01, pp. 8959622 JARNDAL, A. Neural network electrothermal modeling approach for microwave active devices. In INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. ISSN 1096-4290, SEP 2019, vol. 29, no. 9. KHAN, M.N. - AHMED, U.F. - AHMED, M.M. - REHMAN, S. An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. ISSN 0894-3370, NOV 2019, vol. 32, no. 6, SI. JARNDAL, A. GaN HEMT Electrothermal Modeling Using Feedback Neural Networks Technique. In 2019 INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTING TECHNOLOGIES AND APPLICATIONS (ICECTA). 2019. GUO, H.X. - KONG, Y.C. - CHEN, T.S. Impact of thermal boundary resistance on the thermal design of GaN-on-Diamond HEMTs. In 2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC). ISSN 0569-5503, 2019, p. 1842-1847. JARNDAL, A. On Neural Networks Based Electrothermal Modeling of GaN Devices. In IEEE ACCESS. ISSN 2169-3536, 2019, vol. 7, p. 94205-94214. REHMAN, S.U. - AHMED, U.F. - AHMED, M.M. - KHAN, M.N. Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs. In IEEE ACCESS. ISSN 2169-3536, 2019, vol. 7, p. 49702-49711. GONZALEZ, B. - DE SANTI, C. - RAMPAZZO, F. - MENEGHINI, M. - NUNEZ, A. - ZANONI, E. - MENEGHESSO, G. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, DEC 2020, vol. 67, no. 12, p. 5408-5414. WANG, L. - LIU, J. - ZHOU, W.Y. - XU, Z.C. - WU, Y.Y. - TAO, H.Q. A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs. In INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. ISSN 0894-3370, MAY 2020, vol. 33, no. 3, SI. YAN, X.Z. - WU, Q.S. - WANG, X. - SUN, X.Y. Semicool Temperature Compensation Algorithm Based on the Double Exponential Model in the Ultrasonic Positioning System. In IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. ISSN 0018-9456, APR 2020, vol. 69, no. 4, 1, p. 995-1010. ZHANG, H. - GUO, Z.X. - LU, Y.F. Enhancement of Hot Spot Cooling by Capped Diamond Layer Deposition for Multifinger AlGaN/GaN HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JAN 2020, vol. 67, no. 1, p. 47-52. PETITDIDIER, S. - GUHEL, Y. - BROCERO, G. - EUDELINE, P. - TROLET, J.L. - MARY, P. - GAQUIERE, C. - BOUDART, B. Influence of neutron irradiation on electron traps induced by ageing test in AlInN/GaN HEMTs. In 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS). 2016. JARNDAL, A. - HUSAIN, S. - HASHMI, M. On temperature-dependent small-signal modelling of GaN HEMTs using artificial neural networks and support vector regression. In IET MICROWAVES ANTENNAS & PROPAGATION. ISSN 1751-8725, JUL 2021, vol. 15, no. 8, p. 937-953. JARNDAL, A. - HUSAIN, S. - HASHMI, M. Genetic algorithm initialized artificial neural network based temperature dependent small-signal modeling technique for GaN high electron mobility transistors. In INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. ISSN 1096-4290, MAR 2021, vol. 31, no. 3, SI. SERMUKSNIS, E. - JORUDAS, J. - SIMUKOVIC, A. - KOVALEVSKIJ, V. - KASALYNAS, I. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures. In APPLIED SCIENCES-BASEL. NOV 2022, vol. 12, no. 21. Dostupné na: https://doi.org/10.3390/app122111079. STRENAER, R. - GUHEL, Y. - GAQUIERE, C. - BOUDART, B. Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, NOV 2022, vol. 69, no. 11, p. 6010-6015. Dostupné na: https://doi.org/10.1109/TED.2022.3209636. TRAN, D.Q. - CARRASCON, R.D. - IWAYA, M. - MONEMAR, B. - DARAKCHIEVA, V. - PASKOV, P.P. Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers. In PHYSICAL REVIEW MATERIALS. ISSN 2475-9953, OCT 7 2022, vol. 6, no. 10. Dostupné na: https://doi.org/10.1103/PhysRevMaterials.6.104602. CHERNYKH, M.Y. - ANDREEV, A.A. - EZUBCHENKO, I.S. - CHERNYKH, I.A. - MAYBORODA, I.O. - KOLOBKOVA, E.M. - GRISHCHENKO, J.V. - PERMINOV, P.A. - SEDOV, V.S. - MARTYANOV, A.K. - ALTAKHOV, A.S. - KOMLENOK, M.S. - PASHININ, V.P. - SINOGEYKIN, A.G. - KONOV, V.I. - ZANAVESKIN, M.L. GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices. In APPLIED MATERIALS TODAY. ISSN 2352-9407, MAR 2022, vol. 26. Dostupné na: https://doi.org/10.1016/j.apmt.2021.101338. HUSAIN, S. - KHAN, K. - JARNDAL, A. - NAURYZBAYEV, G. - HASHMI, M. Temperature Dependent I-V Models for Microwave Transistor Using Radial Basis NNs, Generalized Regression NNs and Feedforward NN. In 2022 5TH INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES (IMPACT). 2022. Dostupné na: https://doi.org/10.1109/IMPACT55510.2022.10029074. HUSAIN, S. - HASHMI, M. - GHANNOUCHI, F.M. Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2022, vol. 10, p. 1015-1032. Dostupné na: https://doi.org/10.1109/JEDS.2022.3224433. TRAN, D.Q. - PASKOVA, T. - DARAKCHIEVA, V. - PASKOV, P.P. On the thermal conductivity anisotropy in wurtzite GaN. In AIP ADVANCES. SEP 1 2023, vol. 13, no. 9. Dostupné na: https://doi.org/10.1063/5.0167866. TRAN, D.Q. - TASNáDI, F. - ZUKAUSKAITE, A. - BIRCH, J. - DARAKCHIEVA, V. - PASKOV, P.P. Thermal conductivity of Scsubix/i/subAlsub1-ix/i/subN and Ysubix/i/subAlsub1-ix/i/subN alloys. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, MAY 1 2023, vol. 122, no. 18. Dostupné na: https://doi.org/10.1063/5.0145847. GAO, Y. - XU, S.R. - TAO, H.C. - ZHANG, Y.C. - ZHANG, J.F. - SU, H.K. - FAN, X.M. - ZHANG, J.C. - HAO, Y. High quality GaN films on miscut (111) diamond substrates through non-c orientation suppression. In RESULTS IN PHYSICS. ISSN 2211-3797, APR 2023, vol. 47. Dostupné na: https://doi.org/10.1016/j.rinp.2023.106368. ABDULLAH, M.F. - HUSSIN, M.R.M. - ISMAIL, M.A. - SABLI, S.K.W. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions. In MICROELECTRONIC ENGINEERING. ISSN 0167-9317, MAR 15 2023, vol. 273. Dostupné na: https://doi.org/10.1016/j.mee.2023.111958. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2014 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1109/TED.2014.2350516 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 2.358 Q1 1.411 Q1
Počet záznamov: 1