Počet záznamov: 1
Doping-induced metal-insulator in aluminum-doped 4H silicon
Názov Doping-induced metal-insulator in aluminum-doped 4H silicon Autor Achatz P. Spoluautori Pernot J. Marcenat Christophe Kačmarčík Jozef 1972- SAVEXFYZ - Ústav experimentálnej fyziky SAV ORCID Ferro G. Bustarret Etienne Zdroj.dok. Applied Physics Letters. Vol. 92, no. 7 (2008), art. no. 072103 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy MURANAKA, Takahiro - KIKUCHI, Yoshitake - YOSHIZAWA, Taku - SHIRAKAWA, Naoki - AKIMITSU, Jun. Superconductivity in carrier-doped silicon carbide. In SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. ISSN 1468-6996, 2008, vol. 9, no. 4, art. no. 044204. MARGINE, E. R. - BLASE, X. Ab initio study of electron-phonon coupling in boron-doped SiC. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2008, vol. 93, no. 19, art. no. 192510. ZONJA, S. - OCKO, M. - IVANDA, M. - BILJANOVIC, P. Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, 2008, vol. 41, no. 16, art. no. 162002. NOFFSINGER, Jesse - GIUSTINO, Feliciano - LOUIE, Steven G. - COHEN, Marvin L. Origin of superconductivity in boron-doped silicon carbide from first principles. In PHYSICAL REVIEW B. ISSN 1098-0121, 2009, vol. 79, no. 10, art. no. 104511. YU, I.S. - JAMET, M. - DEVILLERS, T. - BARSKI, A. - BAYLE-GUILLEMAUD, P. - BEIGNE, C. - ROTHMAN, J. - BALTZ, V. - CIBERT, J. Spinodal decomposition to control magnetotransport in (Ge,Mn) films. In PHYSICAL REVIEW B. ISSN 1098-0121, 2010, vol. 82, no. 3, art. no. 035308. FERRO, Gabriel. New approaches to in-situ doping of SiC epitaxial layers. In ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS. ISSN 1022-6680, 2011, vol. 324, pp. 14. HARTMAN, J. Stephen - BERNO, Bob - HAZENDONK, Paul - HENS, Philip - YE, Eric - BAIN, Alex D. Spin-lattice relaxation in aluminum-doped semiconducting 4H and 6H polytypes of silicon carbide. In SOLID STATE NUCLEAR MAGNETIC RESONANCE. ISSN 0926-2040, 2012, vol. 45-46, no., pp. 45. JI, Shiyang - KOJIMA, Kazutoshi - ISHIDA, Yuuki - SAITO, Shingo - KATO, Tomohisa - TSUCHIDA, Hidekazu - YOSHIDA, Sadafumi - OKUMURA, Hajime. The growth of low resistivity, heavily Al-doped 4H-SiC thick epilayers by hot-wall chemical vapor deposition. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, 2013, vol. 380, no., pp. 85. PARISINI, A. - NIPOTI, R. Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2013, vol. 114, no. 24, art. no. 243703. NATH, A. - RAO, Mulpuri V. - TIAN, Y.L. - PARISINI, A. - NIPOTI, R. Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, 2014, vol. 43, no. 4, pp. 843. PARISINI, A. - GORNI, M. - NATH, A. - BELSITO, L. - RAO, Mulpuri V. - NIPOTI, R. Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2015, vol. 118, no. 3, art. no. 035101. JI, Shiyang - ETO, Kazuma - YOSHIDA, Sadafumi - KOJIMA, Kazutoshi - ISHIDA, Yuuki - SAITO, Shingo - TSUCHIDA, Hidekazu - OKUMURA, Hajime. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, 2015, vol. 8, no. 12, art. no. 121302. MORTET, V. - TREMOUILLES, D. - BULIR, J. - HUBIK, P. - HELLER, L. - BEDEL-PEREIRA, E. - SOLTANI, A. Peculiarities of high electric field conduction in p-type diamond. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2016, vol. 108, no. 15. ONUFRIJEVS, P. - SCAJEV, P. - JARASIUNAS, K. - MEDVID, A. - KORSAKS, V. - MIRONOVA-ULMANE, N. - ZUBKINS, M. - MIMURA, H. Photo-electrical and transport properties of hydrothermal ZnO. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2016, vol. 119, no. 13. LIU, Ning - WANG, Wenjun - GUO, Liwei - PENG, Tonghua - CHEN, Xiaolong. Superconductivity in nitrogen-doped 3C-SiC from first-principles calculations. In MODERN PHYSICS LETTERS B. ISSN 0217-9849, 2017, vol. 31, no. 12. CONTRERAS, Sylvie - KONCZEWICZ, Leszek - ARVINTE, Roxana - PEYRE, Herve - CHASSAGNE, Thierry - ZIELINSKI, Marcin - JUILLAGUET, Sandrine. Electrical transport properties of p-type 4H-SiC. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ISSN 1862-6300, 2017, vol. 214, no. 4. PARISINI, Antonella - PARISINI, Andrea - NIPOTI, Roberta. Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC. In JOURNAL OF PHYSICS-CONDENSED MATTER. ISSN 0953-8984, 2017, vol. 29, no. 3. DARMODY, C. - GOLDSMAN, N. Incomplete ionization in aluminum-doped 4H-silicon carbide. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2019, vol. 126, no. 14. ZHURAEV, Kh. N. - YUSUPOV, A. - GULYAMOV, A. G. - KHAZHIEV, M. U. - SAIDOV, D. Sh. - ADILOV, N. B. ACTIVATION ENERGY OF THE CONDUCTANCE OF p-n-4H-SiC Al STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW-TEMPERATURE DIFFUSION. In JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS. ISSN 1062-0125, 2020, vol. 93, no. 4, pp. 1036-1041. Dostupné na: https://doi.org/10.1007/s10891-020-02205-5. TAREKEGNE, Abebe T. - SHI, Xiaodong - GAN, Yulin - CHEN, Yunzhong - OU, Haiyan. Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H-SiC. In PHYSICAL REVIEW APPLIED. ISSN 2331-7019, 2020, vol. 13, no. 6, pp. Dostupné na: https://doi.org/10.1103/PhysRevApplied.13.064002. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2008 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1063/1.2885081 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2008 2007 3.596 Q1 3.012 Q1
Počet záznamov: 1