Počet záznamov: 1
Superconductivity in doped cubic silicon
Názov Superconductivity in doped cubic silicon Autor Bustarret Etienne Spoluautori Marcenat Christophe Achatz P. Kačmarčík Jozef 1972- SAVEXFYZ - Ústav experimentálnej fyziky SAV ORCID Lévy F. Huxley A. Ortéga L. Bourgeois E. Blase X. Débarre D. Boulmer J. Zdroj.dok. Nature. Vol. 444, no. 7118 (2006), p. 465-468 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy NESLADEK, M. - MARES, J.J. - HUBIK, P. Superconductivity and low-dimensional electrical transport in nanocrystalline diamond. In NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2006, vol. 16, no. 6, p. 323-336. CAVA, R.J. Solid-state physics - Super silicon. In NATURE, 2006, vol. 444, no. 7118, p. 427-428. DEKURA, H. - SHIRAI, K. - KATAYAMA-YOSHIDA, H. Valence control and metallization of boron by electronic doping. In PHYSICA B-CONDENSED MATTER, 2007, vol. 401, p. 702-705. MURATA, N. - HARUYAMA, J. - UEDA, Y. - MATSUDAIRA, M. - KARINO, H. - YAGI, Y. - EINARSSON, E. - CHIASHI, S. - MARUYAMA, S. - SUGAI, T. - KISHI, N. - SHINOHARA, H. Meissner effect in honeycomb arrays of multiwalled carbon nanotubes. In PHYSICAL REVIEW B, 2007, vol. 76, art. no. 245424. PUSHPAM, A.T. - NAVANEETHAKRISHNAN, K. Metal-Insulator Transition and superconductivity in doped semiconductors. In SOLID STATE COMMUNICATIONS, 2007, vol. 144, no. 3-4, p. 153-157. REN, Z.A. - KATO, J. - MURANAKA, T. - AKIMITSU, J. - KRIENER, M. - MAENO, Y. Superconductivity in boron-doped SiC. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2007, vol. 76, art. no. 103710. HIRAYAMA, M. - NAKAMURA, J. - NATORI, A. Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces. In JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, vol. 46, no. 8B, p. 5643-5646. ALAWADHI, H. - TSOI, S. - LU, X. - RAMDAS, A.K. - GRIMSDITCH, M. - CARDONA, M. - LAUCK, R. Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO. In PHYSICAL REVIEW B, 2007, vol. 75, art. no. 205207. SHEIN, I.R. - RYZHKOV, M.V. - GORBUNOVA, M.A. - MAKURIN, Y.N. - IVANOVSKII, A.L. Magnetization of beryllium oxide in the presence of nonmagnetic impurities: Boron, carbon, and nitrogen. In JETP LETTERS, 2007, vol. 85, no. 5, p. 246-250. [ANON]. Silicon - superconducting at ambient pressure. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, vol. 1, no. 2, p. 27-27. ALAEI, M. - JAFARI, S.A. - AKBARZADEH, H. Superconductivity in heavily vacant diamond. In JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, vol. 69, no. 12, Sp. Iss. SI, p. 3283-3285. ZHANG, P.H. - XUE, Y. - DEV, P. Electron-phonon renormalization and phonon anharmonicity in metals. In SOLID STATE COMMUNICATIONS, 2008, vol. 148, no. 3-4, p. 151-154. MOUSSA, J.E. - NOFFSINGER, J. - COHEN, M.L. Possible thermodynamic stability and superconductivity of antifluorite Be2BxC1-x. In PHYSICAL REVIEW B, 2008, vol. 78, art. no. 104506. ZONJA, S. - OCKO, M. - IVANDA, M. - BILJANOVIC, P. Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films. In JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, vol. 41, art. no. 162002. DUBROVINSKAIA, N. - WIRTH, R. - WOSNITZA, J. - PAPAGEORGIOU, T. - BRAUN, H.F. - MIYAJIMA, N. - DUBROVINSKY, L. An insight into what superconducts in polycrystalline boron-doped diamonds based on investigations of microstructure. In PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2008, vol. 105, no. 33, p. 11619-11622. KRIENER, M. - MAENO, Y. - OGUCHI, T. - REN, Z.A. - KATO, J. - MURANAKA, T. - AKIMITSU, J. Specific heat and electronic states of superconducting boron-doped silicon carbide. In PHYSICAL REVIEW B, 2008, vol. 78, art. no. 024517. LORTZ, R. - VIENNOIS, R. - PETROVIC, A. - WANG, Y.X. - TOULEMONDE, P. - MEINGAST, C. - KOZA, M.M. - MUTKA, H. - BOSSAK, A. - SAN MIGUEL, A. Phonon density of states, anharmonicity, electron-phonon coupling, and possible multigap superconductivity in the clathrate superconductors Ba8Si46 and Ba24Si100: Factors behind large difference in T-c. In PHYSICAL REVIEW B, 2008, vol. 77, art. no. 224507. SOKOLOV, V.I. - SHELYKH, A.I. Some characteristics of porous silicon (reflection, scattering, refractive index, microhardness). In TECHNICAL PHYSICS LETTERS, 2008, vol. 34, no. 3, p. 196-198. DUBROVINSKAIA, N. - DUBROVINSKY, L. - PAPAGEORGIOU, T. - BOSAK, A. - KRISCH, M. - BRAUN, H.F. - WOSNITZA, J. Large carbon-isotope shift of T-C in boron-doped diamond. In APPLIED PHYSICS LETTERS, 2008, vol. 92, art. no. 13.2506. HERNANDEZ, A.D. - MONTOYA, J.A. - PROFETA, G. - SCANDOLO, S. First-principles investigation of the electron-phonon interaction in OsN2: Theoretical prediction of superconductivity mediated by N-N covalent bonds. In PHYSICAL REVIEW B, 2008, vol. 77, art. no. 092504. LONG, R. - DAI, Y. - HUANG, B.B. - SUN, X.Q. First-principles study of heavily B-doped silicon. In COMPUTATIONAL MATERIALS SCIENCE, 2008, vol. 42, no. 1, p. 161-167. ASHCROFT, N.W. Fluctuation and higher temperature superconductivity in lighter element systems. In PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2008, vol. 468, no. 2, p. 115-125. YU, J.F. - JI, K. - WU, C. - NASU, K. Coexistence of localization and itineracy of electrons in boron-doped diamond. In PHYSICAL REVIEW B, 2008, vol. 77, art. no. 045207. YE, Z.X. - ZHANG, H. - LIU, H.D. - WU, W.H. - LUO, Z.P. Observation of superconductivity in single crystalline Bi nanowires. In NANOTECHNOLOGY, 2008, vol. 19, art. no. 085709. KADAS, K. - VITOS, L. - AHUJA, R. Theoretical evidence of a superconducting transition in doped silicon and germanium driven by a variation of chemical composition. In APPLIED PHYSICS LETTERS, 2008, vol. 92, art. no. 052505. DUBOIS, C. - PRUDON, G. - GAUTIER, B. - DUPUY, J.C. Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method. In APPLIED SURFACE SCIENCE, 2008, vol. 255, no. 4, p. 1377-1380. BASKARAN, G. Impurity band Mott insulators: a new route to high T-c superconductivity. In SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, vol. 9, art. no. 044104. YANASE, Y. - YOROZU, N. Superconductivity in compensated and uncompensated semiconductors. In SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, vol. 9, art. no. 044201. MURANAKA, T. - KIKUCHI, Y. - YOSHIZAWA, T. - SHIRAKAWA, N. - AKIMITSU, J. Superconductivity in carrier-doped silicon carbide. In SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, vol. 9, art. no. 044204. KRIENER, M. - MURANAKA, T. - KATO, J. - REN, Z.A. - AKIMITSU, J. - MAENO, Y. Superconductivity in heavily boron-doped silicon carbide. In SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, vol. 9, art. no. 044205. SCHMIDT, S. - ALHASSID, Y. MESOSCOPIC INTERPLAY OF SUPERCONDUCTIVITY AND FERROMAGNETISM IN ULTRA-SMALL METALLIC GRAINS. In COMPLEX PHENOMENA IN NANOSCALE SYSTEMS, 2009, p. 25-35. KOZUKA, Y. - KIM, M. - BELL, C. - KIM, B.G. - HIKITA, Y. - HWANG, H.Y. Two-dimensional normal-state quantum oscillations in a superconducting heterostructure. In NATURE, 2009, vol. 462, no. 7272, p. 487-490. LEBEGUE, S. Electronic structure of superconducting gallium-doped germanium from ab-initio calculations. In PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, vol. 3, no. 7-8, p. 224-226. BERWEGER, S. - NEACSU, C.C. - MAO, Y.B. - ZHOU, H.J. - WONG, S.S. - RASCHKE, M.B. Optical nanocrystallography with tip-enhanced phonon Raman spectroscopy. In NATURE NANOTECHNOLOGY, 2009, vol. 4, no. 8, p. 496-499. BASKARAN, G. Five-fold way to new high T-c superconductors. In PRAMANA-JOURNAL OF PHYSICS, 2009, vol. 73, no. 1, Sp. Iss. SI, p. 61-112. IAKOUBOVSKII, K. Superconductivity in covalent semiconductors. In CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2009, vol. 7, no. 4, p. 654-662. IAKOUBOVSKII, K. Recent advances in superconductivity of covalent superconductors. In PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2009, vol. 469, no. 13, p. 675-679. HERRMANNSDORFER, T. - HEERA, V. - IGNATCHIK, O. - UHLARZ, M. - MUCKLICH, A. - POSSELT, M. - REUTHER, H. - SCHMIDT, B. - HEINIG, K.H. - SKORUPA, W. - VOELSKOW, M. - WUNDISCH, C. - SKROTZKI, R. - HELM, M. - WOSNITZA, J. Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures. In PHYSICAL REVIEW LETTERS, 2009, vol. 102, art. no. 217003. NOFFSINGER, J. - GIUSTINO, F. - LOUIE, S.G. - COHEN, M.L. Origin of superconductivity in boron-doped silicon carbide from first principles. In PHYSICAL REVIEW B, 2009, vol. 79, art. no. 104511. YANASE, Y. - YOROZU, N. Localization and Superconductivity in Doped Semiconductors. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2009, vol. 78, art. no. 034715. SHIRAI, K. - DEKURA, H. - YANASE, A. Utilization of high pressure for synthesizing superconducting semiconductors: analysis of Ekimov's method. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, vol. 246, no. 3, p. 673-678. KARA, A. - LEANDRI, C. - DAVILA, M. - PADOVA, P. - EALET, B. - OUGHADDOU, H. - AUFRAY, B. - LAY, G. Physics of Silicene Stripes. In JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2009, vol. 22, no. 3, p. 259-263. DEKURA, H. - SHIRAI, K. - YANASE, A. Calculation of Fermi Surface and Its Application to Li-Doped alpha-Boron. In JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2009, vol. 6, no. 12, Sp. Iss. SI, p. 2629-2634. KAWANO, A. - ISHIWATA, H. - IRIYAMA, S. - OKADA, R. - KITAGOH, S. - WATANABE, M. - TAKANO, Y. - YAMAGUCHI, T. - KAWARADA, H. Critical concentrations of superconductor to insulator transition in (111) and (001) CVD boron-doped diamond. In PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2010, vol. 470, SI, p. S604-S607. WAKITA, T. - OKAZAKI, H. - TAKANO, Y. - HIRAI, M. - MURAOKA, Y. - YOKOYA, T. Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence. In PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2010, vol. 470, SI, p. S641-S643. SKROTZKI, R. - FIEDLER, J. - HERRMANNSDORFER, T. - HEERA, V. - VOELSKOW, M. - MUCKLICH, A. - SCHMIDT, B. - SKORUPA, W. - GOBSCH, G. - HELM, M. - WOSNITZA, J. On-chip superconductivity via gallium overdoping of silicon. In APPLIED PHYSICS LETTERS, 2010, vol. 97, no. 19, art. no. 192505. AREFI, H.H. - JAFARI, S.A. - ABOLHASSANI, M.R. Substitutional doping of Cu in diamond: Mott physics with p orbitals. In EUROPEAN PHYSICAL JOURNAL B, 2010, vol. 77, no. 3, p. 331-336. KAWANO, A. - ISHIWATA, H. - IRIYAMA, S. - OKADA, R. - YAMAGUCHI, T. - TAKANO, Y. - KAWARADA, H. Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition. In PHYSICAL REVIEW B, 2010, vol. 82, no. 8, art. no. 085318. DAI, J. - LI, Z.Y. - YANG, J.L. Electron-phonon Coupling in Gallium-Doped Germanium. In CHINESE PHYSICS LETTERS, 2010, vol. 27, no. 8, art. no. 086102. DING, J.N. - WANG, J.X. - YUAN, N.Y. - KAN, B.A. - CHEN, X.S. Electronic band transformation from indirect gap to direct gap in Si-H compound. In CHINESE PHYSICS B, 2010, vol. 19, no. 7, art. no. 077103. RHEE, H.B. - BANERJEE, S. - YLVISAKER, E.R. - PICKETT, W.E. NaAlSi: Self-doped semimetallic superconductor with free electrons and covalent holes. In PHYSICAL REVIEW B, 2010, vol. 81, no. 24, art. no. 245114. SHIRAI, K. Electronic Structures and Mechanical Properties of Boron and Boron-Rich Crystals (Part I). In JOURNAL OF SUPERHARD MATERIALS, 2010, vol. 32, no. 3, p. 205-225. WANG, F.F. - FUKUHARA, T. - MAEZAWA, K. - MASUBUCHI, S. Mn Doping in Half-Heusler Semiconductors: Microstructural and Transport Properties. In JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, vol. 49, no. 5, Part 1, art. no. 053002. LI, Y.W. - YUE, J.X. - LIU, X. - MA, Y.M. - CUI, T. - ZOU, G.T. Ultra-incompressible superconducting phase of OsC predicted by phonon calculations. In PHYSICS LETTERS A, 2010, vol. 374, no. 17-18, p. 1880-1884. HERRMANNSDORFER, T. - SKROTZKI, R. - HEERA, V. - IGNATCHIK, O. - UHLARZ, M. - MUCKLICH, A. - POSSELT, M. - SCHMIDT, B. - HEINIG, K.H. - SKORUPA, W. - VOELSKOW, M. - WUNDISCH, C. - HELM, M. - WOSNITZA, J. Superconductivity in thin-film germanium in the temperature regime around 1 K. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2010, vol. 23, no. 3, art. no. 034007. INUSHIMA, T. - MAUDE, D.K. - MUTO, D. - NANISHI, Y. Meissner effect of superconducting InN. In PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, 2010, vol. 7, no. 5, p. 1287-1292. SHIUE, J. - KUO, P.C. Anomalous current-voltage characteristics and structural phenomena in an Au-Si interface. In SCRIPTA MATERIALIA, 2010, vol. 62, no. 2, p. 82-84. KRIENER, M. - MURANAKA, T. - KIKUCHI, Y. - AKIMITSU, J. - MAENO, Y. Specific heat of aluminium-doped superconducting silicon carbide. In INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009). 2010, vol. 200, art. no. DOI: 10.1088/1742-6596/200/1/012096. BELOGOLOVSKII, M. - FELNER, I. - SHATERNIK, V. ZIRCONIUM DODECABORIDE, A NOVEL SUPERCONDUCTING MATERIAL WITH ENHANCED SURFACE CHARACTERISTICS. In BORON RICH SOLIDS: SENSORS, ULTRA HIGH TEMPERATURE CERAMICS, THERMOELECTRICS, ARMOR, 2010, p. 195-206. ZABIDI, N.A. - KASSIM, H.A. - SHRIVASTAVA, K.N. Band Structure of Gallium-Doped Germanium Crystal. In MALAYSIA ANNUAL PHYSICS CONFERENCE 2010 (PERFIK-2010). Book Series: AIP Conference Proceedings Volume: 1328 Pages: 77-79 DOI: 10.1063/1.3573693 Published: 2011. LANGNER, A. - MULLER, F. - GOSELE, U. Macroporous Silicon. In MOLECULAR- AND NANO-TUBES, 2011, p. 431-460. KOCINIEWSKI, T. - FOSSARD, F. - PERROSSIER, J.L. - DEBARRE, D. - BOULMER, J. Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD). In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 2011, vol. 8, no. 3, Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 8 Issue: 3, p. 915-918 DOI: 10.1002/pssc.201000345 Published: 2011. DUBOIS, C. - PRUDON, G. - DUPUY, J.C. - GAUTIER, B. - CANUT, B. - LE GALL, Y. - KOCINIEWSKI, T. The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%. In SURFACE AND INTERFACE ANALYSIS, 2011, vol. 43, no. 1-2, p. 36-40. NOFFSINGER, J. - COHEN, M.L. Superconductivity in monolayer Pb on Si(111) from first principles. In SOLID STATE COMMUNICATIONS, 2011, vol. 151, no. 6, p. 421-424. CHEN, X.J. - ZHANG, C. - MENG, Y. - ZHANG, R.Q. - LIN, H.Q. - STRUZHKIN, V.V. - MAO, H.K. beta-tin -> Imma -> sh Phase Transitions of Germanium. In PHYSICAL REVIEW LETTERS, 2011, vol. 106, no. 13, art. no. 135502. BLASE, X. Superconductivity in doped clathrates, diamond and silicon. In COMPTES RENDUS PHYSIQUE, 2011, vol. 12, no. 5-6, p. 584-590. FIEDLER, J. - HEERA, V. - SKROTZKI, R. - HERRMANNSDORFER, T. - VOELSKOW, M. - MUCKLICH, A. - OSWALD, S. - SCHMIDT, B. - SKORUPA, W. - GOBSCH, G. - WOSNITZA, J. - HELM, M. Superconducting films fabricated by high-fluence Ga implantation in Si. In PHYSICAL REVIEW B, 2011, vol. 83, no. 21, art. no. 214504. JOHNSON, B.C. - HABERL, B. - BRADBY, J.E. - MCCALLUM, J.C. - WILLIAMS, J.S. Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation. In PHYSICAL REVIEW B, 2011, vol. 83, no. 23, art. no. 23505. DEKURA, H. - SHIRAI, K. - YANASE, A. Efficient method for Li doping of alpha-rhombohedral boron. In PHYSICAL REVIEW B, 2011, vol. 84, no. 9, art. no. 094117. SKROTZKI, R. - HERRMANNSDORFER, T. - HEERA, V. - FIEDLER, J. - MUCKLICH, A. - HELM, M. - WOSNITZA, J. The impact of heavy Ga doping on superconductivity in germanium. In LOW TEMPERATURE PHYSICS, 2011, vol. 37, no. 10, p. 877-883. FLORES-LIVAS, J.A. - DEBORD, R. - BOTTI, S. - SAN MIGUEL, A. - PAILHES, S. - MARQUES, M.A.L. Superconductivity in layered binary silicides: A density functional theory study. In PHYSICAL REVIEW B, 2011, vol. 84, no. 18, art. no. 184503. Skrotzki, R., Herrmannsdörfer, T., Heera, V., Fiedler, J., Mücklich, A., Helm, M., Wosnitza, J.The impact of heavy Ga doping on superconductivity in germanium 2011 Fizika Nizkikh Temperatur (Kharkov) 37 (9-10) , pp. 1098-1106 Belogolovskii, M., Felner, I., Shaternik, V. Zirconium dodecaboride, a novel superconducting material with enhanced surface characteristics 2011 NATO Science for Peace and Security Series B: Physics and Biophysics , pp. 195-206 MUTHUKRISHNAVENI, M. - SRINIVASAN, N. Mott criterion for metal-insulator transition in doped semiconductors in intense magnetic fields. In PHASE TRANSITIONS, 2012, vol. 85, no. 5, p. 391-399. DAI, J. - LI, Z.Y. - YANG, J.L. - HOU, J.G. A first-principles prediction of two-dimensional superconductivity in pristine B2C single layers. In NANOSCALE, 2012, vol. 4, no. 10, p. 3032-3035. ZHANG, H.L. - JOHANSSON, B. - AHUJA, R. - VITOS, L. First-principles study of solid-solution hardening in steel alloys. In COMPUTATIONAL MATERIALS SCIENCE, 2012, vol. 55, p. 269-272. FIEDLER, J. - HEERA, V. - SKROTZKI, R. - HERRMANNSDORFER, T. - VOELSKOW, M. - MUCKLICH, A. - FACSKO, S. - REUTHER, H. - PEREGO, M. - HEINIG, K.H. - SCHMIDT, B. - SKORUPA, W. - GOBSCH, G. - HELM, M. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations. In PHYSICAL REVIEW B, 2012, vol. 85, no. 13, art. no. 134530. HANSSON, Anders - DE BRITO MOTA, F. - RIVELINO, Roberto. Metallic behavior in low-dimensional honeycomb SiB crystals: A first-principles prediction of atomic structure and electronic properties. In PHYSICAL REVIEW B, 2012, vol. 86, no. 19, art. no. 195416. HOUMMADA, K. - DAHLEM, F. - KOCINIEWSKI, T. - BOULMER, J. - DUBOIS, C. - PRUDON, G. - BUSTARRET, E. - COURTOIS, H. - DEBARRE, D. - MANGELINCK, D. Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography. In APPLIED PHYSICS LETTERS, 2012, vol. 101, no. 18, art. no. 182602. BHADURI, A. - KOCINIEWSKI, T. - FOSSARD, F. - BOULMER, J. - DEBARRE, D. Optical and electrical properties of laser doped Si:B in the alloy range. In APPLIED SURFACE SCIENCE, 2012, vol. 258, no. 23, p. 9228-9232. HALPIN, J. - SHAH, V. - MYRONOV, M. - LEADLEY, D. Epitaxial growth of highly strained SiGe layers directly on Si(001) substrate. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 Proceedings, 2012, p. 130-131. BELOUSOV, O.K. - PALII, N.A. On the problem of the superconducting transition temperature. In Russian Metallurgy (Metally), 2012, 2012, 7, p. 572-587. ZHANG, Chao - CHEN, Xiao-Jia - LIN, Hai-Qing. Superconductivity in beta-Tin Germanium. In JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM. ISSN 1557-1939, 2013, vol. 26, no. 5, pp. 2009. CHAN, Kevin T. - MALONE, Brad D. - COHEN, Marvin L. Pressure dependence of superconductivity in simple cubic phosphorus. In PHYSICAL REVIEW B. ISSN 1098-0121, 2013, vol. 88, no. 6, art. no. 064517. PI, Xiaodong - DELERUE, Christophe. Tight-Binding Calculations of the Optical Response of Optimally P-Doped Si Nanocrystals: A Model for Localized Surface Plasmon Resonance. In PHYSICAL REVIEW LETTERS. ISSN 0031-9007, 2013, vol. 111, no. 17, art. no. 177402. YONEZAWA, Shingo - MAENO, Yoshiteru. Transport properties of Ag5Pb2O6: A three-dimensional electron-gas-like system with low carrier density. In PHYSICAL REVIEW B. ISSN 1098-0121, 2013, vol. 88, no. 20, art. no. 205143. JIN, Kui - SUCHOSKI, Richard - FACKLER, Sean - ZHANG, Yi - PAN, Xiaoqing - GREENE, Richard L. - TAKEUCHI, Ichiro. Combinatorial search of superconductivity in Fe-B composition spreads. In APL MATERIALS. ISSN 2166-532X, 2013, vol. 1, no. 4, art. no. 042101. NAKAMURA, K. - RHIM, S. H. - SUGIYAMA, A. - SANO, K. - AKIYAMA, T. - ITO, T. - WEINERT, M. - FREEMAN, A. J. Electric-field-driven hole carriers and superconductivity in diamond. In PHYSICAL REVIEW B. ISSN 1098-0121, 2013, vol. 87, no. 21, art. no. 214506. UENO, Kazunori. Electric-Field-Induced Superconductivity on an Organic/Oxide Interface. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2013, vol. 52, no. 11, art. no. UNSP 110129. HEERA, V. - FIEDLER, J. - HUEBNER, R. - SCHMIDT, B. - VOELSKOW, M. - SKORUPA, W. - SKROTZKI, R. - HERRMANNSDOERFER, T. - WOSNITZA, J. - HELM, M. Silicon films with gallium-rich nanoinclusions: from superconductor to insulator. In NEW JOURNAL OF PHYSICS. ISSN 1367-2630, 2013, vol. 15, art. no. 083022. MALLIAKAS, Christos D. - CHUNG, Duck Young - CLAUS, Helmut - KANATZIDIS, Mercouri G. Superconductivity in the Narrow-Gap Semiconductor CsBi4Te6. In JOURNAL OF THE AMERICAN CHEMICAL SOCIETY. ISSN 0002-7863, 2013, vol. 135, no. 39, pp. 14540. BAGRAEV, N. T. - KLYACHKIN, L. E. - KUZMIN, R. V. - MALYARENKO, A. M. - MASHKOV, V. A. Features of the electroluminescence spectra of quantum-confined silicon p (+)-n heterojunctions in the infrared spectral region. In SEMICONDUCTORS. ISSN 1063-7826, 2013, vol. 47, no. 11, pp. 1517. FIEDLER, J. - HEERA, V. - VOELSKOW, M. - MUECKLICH, A. - REUTHER, H. - SKORUPA, W. - GOBSCH, G. - HELM, M. Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, 2013, vol. 123, no. 5, pp. 916. LIN, Zhenzhen - WANG, Xinchen. Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis. In ANGEWANDTE CHEMIE-INTERNATIONAL EDITION. ISSN 1433-7851, 2013, vol. 52, no. 6, pp. 1735. CHEN, Lan - FENG, Baojie - WU, Kehui. Observation of a possible superconducting gap in silicene on Ag(111) surface. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2013, vol. 102, no. 8, art. no.081602. YAO, Xiaolong - FENG, Yexin - HU, Zhenpeng - ZHANG, Lixin - WANG, E. G. Dimerization of boron dopant in diamond (100) epitaxy induced by strong pair correlation on the surface. In Journal of Physics Condensed Matter. ISSN 09538984, 2013-01-30, 25, 4, art. no. 045011. HIRAI, Daigorou - KAWAKAMI, Rui - MAGDYSYUK, Oxana V. - DINNEBIER, Robert E. - YARESKO, Alexander - TAKAGI, Hidenori. Superconductivity at 3.7K in Ternary Silicide Li2IrSi3. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2014, vol. 83, no. 10, art. no. 103703. TAKABATAKE, Toshiro - SUEKUNI, Koichiro - NAKAYAMA, Tsuneyoshi. Phonon-glass electron-crystal thermoelectric clathrates: Experiments and theory. In REVIEWS OF MODERN PHYSICS. ISSN 0034-6861, 2014, vol. 86, no. 2, pp. 669. OVSYANNIKOV, Sergey V. - GOU, Huiyang - KARKIN, Alexander E. - SHCHENNIKOV, Vladimir V. - WIRTH, Richard - DMITRIEV, Vladimir - NAKAJIMA, Yoichi - DUBROVINSKAIA, Natalia - DUBROVINSKY, Leonid S. Bulk Silicon Crystals with the High Boron Content, Si1-xBx: Two Semiconductors Form an Unusual Metal. In CHEMISTRY OF MATERIALS. ISSN 0897-4756, 2014, vol. 26, no. 18, pp. 5274. SHIM, Yun-Pil - TAHAN, Charles. Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor. In NATURE COMMUNICATIONS. ISSN 2041-1723, 2014, vol. 5, no., art. no. 4225. JARLBORG, T. Theoretical aspects of simple and nested Fermi surfaces for superconductivity in doped semiconductors and high-T-c cuprates. In SOLID STATE COMMUNICATIONS. ISSN 0038-1098, 2014, vol. 181, pp. 15. MCKIBBIN, S. R. - POLLEY, C. M. - SCAPPUCCI, G. - KEIZER, J. G. - SIMMONS, M. Y. Low resistivity, super-saturation phosphorus-in-silicon monolayer doping. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2014, vol. 104, no. 12, art. no. 123502. KOTEGAWA, Hisashi - OSHIRO, Satoru - SHIMIZU, Yuki - TOU, Hideki - KASAHARA, Yuichi - KISHIUME, Tsukasa - TAGUCHI, Yasujiro - IWASA, Yoshihiro. Strong suppression of coherence effect and appearance of pseudogap in the layered nitride superconductor LixZrNCl: Zr-91- and N-15-NMR studies. In PHYSICAL REVIEW B. ISSN 1098-0121, 2014, vol. 90, no. 2, art. no. 020503. KUO, Pai-Chia - CHEN, Chun-Wei - LEE, Ku-Pin - SHIUE, Jessie. Superconductivity observed in platinum-silicon interface. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, 2014, vol. 104, no. 21, art. no. 211604. SUGIYAMA, Aiichiro - NAKAMURA, Kohji - SANO, Kazuhiro - AKIYAMA, Toru - ITO, Tomonori. Electronic structures and induced-hole carriers of covalent semiconductors in external electric field. In e-Journal of Surface Science and Nanotechnology, 2014-03-15, 12, pp. 109-111. FIEDLER, J. - HEERA, V. Superconducting gallium implanted germanium. In Springer Series in Materials Science. ISSN 0933033X, 2014-01-01, 192, pp. 57-78. NELSON, J. J. - GOLDMAN, A. M. Metallic state of low-mobility silicon at high carrier density induced by an ionic liquid. In PHYSICAL REVIEW B. ISSN 1098-0121, 2015, vol. 91, no. 24, art. no. 241304. STOIB, Benedikt - GREPPMAIR, Anton - PETERMANN, Nils - WIGGERS, Hartmut - STUTZMANN, Martin - BRANDT, Martin S. Laser-Assisted Wet-Chemical Doping of Sintered Si and Ge Nanoparticle Films. In ADVANCED ELECTRONIC MATERIALS. ISSN 2199-160X, 2015, vol. 1, no. 5, art. no. 1400029. HOSONO, Hideo - KIM, Sung-Wng - MATSUISHI, Satoru - TANAKA, Shigeki - MIYAKE, Atsushi - KAGAYAMA, Tomoko - SHIMIZU, Katsuya. Superconductivity in room-temperature stable electride and high-pressure phases of alkali metals. In PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES. ISSN 1364-503X, 2015, vol. 373, no. 2037, art. no. 20140450. MUTHUKRISHNAVENI, M. - SRINIVASAN, N. Electron-electron interaction and metal-insulator transition in doped semiconductors under intense magnetic fields. In PHASE TRANSITIONS. ISSN 0141-1594, 2015, vol. 88, no. 12, pp. 1174-1180. MORI, Masaki - SAEKI, Yosuke - HAKAMATA, Masaki - SATO, Takuya - KABASAWA, Eiki - NAKAMURA, Jin. Electronic Structures of Aluminum-Doped Diamond near the Fermi Level. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2015, vol. 84, no. 4, art. no. 044704. NI, Zhenyi - PI, Xiaodong - ALI, Muhammad - ZHOU, Shu - NOZAKI, Tomohiro - YANG, Deren. Freestanding doped silicon nanocrystals synthesized by plasma. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, 2015, vol. 48, no. 31, art. no. 314006. SUN, Y. B. - DI, Z. F. - HU, T. - XIE, X. M. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. In ADVANCES IN CONDENSED MATTER PHYSICS. ISSN 1687-8108, 2015, art. no. 963768. CALANDRA, Matteo - ZOCCANTE, Paolo - MAURI, Francesco. Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction. In PHYSICAL REVIEW LETTERS. ISSN 0031-9007, 2015, vol. 114, no. 7, art. no. 077001. AUBIN, J. - HARTMANN, J. M. - VEILLEROT, M. - ESSA, Z. - SERMAGE, B. Very low temperature (450 degrees C) selective epitaxial growth of heavily in situ boron-doped SiGe layers. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, 2015, vol. 30, no. 11, art. no. 115006. SHIM, Yun-Pil - TAHAN, Charles. Superconducting-Semiconductor Quantum Devices: From Qubits to Particle Detectors. In IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. ISSN 1077-260X, 2015, vol. 21, no. 2, art. no. 9100209. KEIZER, Joris G. - MCKIBBIN, Sarah R. - SIMMONS, Michelle Y. The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multi layers. In ACS NANO. ISSN 1936-0851, 2015, vol. 9, no. 7, pp. 7080-7084. COHEN, Marvin L. Superconductivity in modified semiconductors and the path to higher transition temperatures. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY. ISSN 0953-2048, 2015, vol. 28, no. 4, art. no. 043001. ZHOU, Shu - PI, Xiaodong - NI, Zhenyi - LUAN, Qingbin - JIANG, Yingying - JIN, Chuanhong - NOZAKI, Tomohiro - YANG, Deren. Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals. In PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION. ISSN 0934-0866, 2015, vol. 32, no. 2, pp. 213-221. ULYANENKOVA, Tatjana - MYRONOV, Maksym - ULYANENKOV, Alex. Boron doped cubic silicon probed by high resolution X-ray diffraction. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 3. ISSN 1862-6351, 2015, vol. 12, no. 3, pp. 255-258. SHER, Meng-Ju - MANGAN, Niall M. - SMITH, Matthew J. - LIN, Yu-Ting - MARBACH, Sophie - SCHNEIDER, Tobias M. - GRADECAK, Silvija - BRENNER, Michael P. - MAZUR, Eric. Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2015, vol. 117, no. 12, art. no. 125301. HAPIUK, D. - MARQUES, M. A. L. - MELINON, P. - BOTTI, S. - MASENELLI, B. - FLORES-LIVAS, J. A. Superconductivity in an expanded phase of ZnO: an ab initio study. In NEW JOURNAL OF PHYSICS. ISSN 1367-2630, 2015, vol. 17, art. no. 043034. JARLBORG, T. Electronic Structure and Properties of Superconducting Materials with Simple Fermi Surfaces. In JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM. ISSN 1557-1939, 2015, vol. 28, no. 4, pp. 1231-1236. NI, Zhenyi - PI, Xiaodong - ZHOU, Shu - NOZAKI, Tomohiro - GRANDIDIER, Bruno - YANG, Deren. Size-Dependent Structures and Optical Absorption of Boron-Hyperdoped Silicon Nanocrystals. In ADVANCED OPTICAL MATERIALS. ISSN 2195-1071, 2016, vol. 4, no. 5, pp. 700-707. CARUSO, Fabio - GIUSTINO, Feliciano. Theory of electron-plasmon coupling in semiconductors. In PHYSICAL REVIEW B. ISSN 2469-9950, 2016, vol. 94, no. 11, art. no. 115208. NAGAO, Masanori - MIURA, Akira - UETA, Ikuo - WATAUCHI, Satoshi - TANAKA, Isao. Superconductivity in CeOBiS2 with cerium valence fluctuation. In SOLID STATE COMMUNICATIONS. ISSN 0038-1098, 2016, vol. 245, pp. 11-14. TRUONG, Nguyen Xuan - HAERTELT, Marko - JAEGER, Bertram K. A. - GEWINNER, Sandy - SCHOELLKOPF, Wieland - FIELICKE, Andre - DOPFER, Otto. Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B. In INTERNATIONAL JOURNAL OF MASS SPECTROMETRY. ISSN 1387-3806, 2016, vol. 395, pp. 1-6. KASHIF, Muhammad K. - MILHUISEN, Rebecca A. - NIPPE, Michael - HELLERSTEDT, Jack - ZEE, David Z. - DUFFY, Noel W. - HALSTEAD, Barry - DE ANGELIS, Filippo - FANTACCI, Simona - FUHRER, Michael S. - CHANG, Christopher J. - CHENG, Yi-Bing - LONG, Jeffrey R. - SPICCIA, Leone - BACH, Udo. Cobalt Polypyridyl Complexes as Transparent SolutionProcessable Solid- State Charge Transport Materials. In ADVANCED ENERGY MATERIALS. ISSN 1614-6832, 2016, vol. 6, no. 24, art. no. 1600874. MORALES, F. - NUNEZ-REGUEIRO, M. - TOULEMONDE, P. - MACHON, D. - LE FLOCH, S. - PISCHEDDA, V. - LAGARDE, P. - FLANK, A.M. - ITIE, J. P. - SAN-MIGUEL, A. Enhanced high-pressure superconductivity and local structure of the Ba8Si46 clathrate. In PHYSICAL REVIEW B. ISSN 2469-9950, 2016, vol. 94, no. 10, art. no. 104507. SHIM, Yun-Pil - TAHAN, Charles. Semiconductor-inspired design principles for superconducting quantum computing. In NATURE COMMUNICATIONS. ISSN 2041-1723, 2016, vol. 7, art. no. 11059. HUANG, Liang-Feng - RONDINELLI, James M. Stable MoSi2 nanofilms with controllable and high metallicity. In PHYSICAL REVIEW MATERIALS. ISSN 2475-9953, 2017, vol. 1, no. 6. SASAMA, Yosuke - YAMAGUCHI, Takahide - TANAKA, Masashi - TAKEYA, Hiroyuki - TAKANO, Yoshihiko. Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2017, vol. 86, no. 11. NGUYEN XUAN TRUONG - JAEGER, Bertram Klaus August - GEWINNER, Sandy - SCHOELLKOPF, Wieland - FIELICKE, Andre - DOPFER, Otto. Infrared Spectroscopy and Structures of Boron-Doped Silicon Clusters (SinBm, n=3-8, m=1-2). In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, 2017, vol. 121, no. 17, pp. 9560-9571. HILLER, Daniel - LOPEZ-VIDRIER, Julian - GUTSCH, Sebastian - ZACHARIAS, Margit - WAHL, Michael - BOCK, Wolfgang - BRODYANSKI, Alexander - KOPNARSKI, Michael - NOMOTO, Keita - VALENTA, Jan - KONIG, Dirk. Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects. In SCIENTIFIC REPORTS. ISSN 2045-2322, 2017, vol. 7. FLORES-LIVAS, Jose A. - SANNA, Antonio - GRAUZINYTE, Migle - DAVYDOV, Arkadiy - GOEDECKER, Stefan - MARQUES, Miguel A. L. Emergence of superconductivity in doped H2O ice at high pressure. In SCIENTIFIC REPORTS. ISSN 2045-2322, 2017, vol. 7. WANG, Jingjing - SUN, Guoliang - KONG, Panlong - SUN, Weiguo - LU, Cheng - PENG, Feng - KUANG, Xiaoyu. Novel structural phases and the electrical properties of Si3B under high pressure. In PHYSICAL CHEMISTRY CHEMICAL PHYSICS. ISSN 1463-9076, 2017, vol. 19, no. 24, pp. 16206-16212. KOBAYASHI, Keigo - KOBAYASHI, Hirokazu - MAESATO, Mitsuhiko - HAYASHI, Mikihiro - YAMAMOTO, Tomokazu - YOSHIOKA, Satoru - MATSUMURA, Syo - SUGIYAMA, Takeharu - KAWAGUCHI, Shogo - KUBOTA, Yoshiki - NAKANISHI, Hiroshi - KITAGAWA, Hiroshi. Discovery of Hexagonal Structured Pd-B Nanocrystals. In ANGEWANDTE CHEMIE-INTERNATIONAL EDITION. ISSN 1433-7851, 2017, vol. 56, no. 23, pp. 6578-6582. ONUFRIIENKO, O. - SAMUELY, T. - ZHANG, G. - VANACKEN, J. - XU, Zheng - MAY, P. W. - SZABO, P. - MOSHCHALKOV, V. V. - SAMUELY, P. Superconducting Density of States in B-Doped Diamond. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, 2017, vol. 131, no. 4, pp. 1033-1035. LIU, Ning - WANG, Wenjun - GUO, Liwei - PENG, Tonghua - CHEN, Xiaolong. Superconductivity in nitrogen-doped 3C-SiC from first-principles calculations. In MODERN PHYSICS LETTERS B. ISSN 0217-9849, 2017, vol. 31, no. 12. PORRATI, F. - KELLER, L. - GSPAN, C. - PLANK, H. - HUTH, M. Electrical transport properties of Ga irradiated W-based granular nanostructures. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, 2017, vol. 50, no. 21. PRUCNAL, S. - REBOHLE, L. - SKORUPA, W. Doping by flash lamp annealing. In MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ISSN 1369-8001, 2017, vol. 62, pp. 115-127. SASAMA, Yosuke - YAMAGUCHI, Takahide - TANAKA, Masashi - TAKEYA, Hiroyuki - TAKANO, Yoshihiko. Transport Properties of Hydrogen-Terminated Silicon Surface Controlled by Ionic-Liquid Gating. In JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. ISSN 0031-9015, 2017, vol. 86, no. 1. YANG, W. - FERDOUS, N. - SIMPSON, P. J. - GAUDET, J. M. - HUDSPETH, Q. - CHOW, P. K. - WARRENDER, J. M. - AKEY, A. J. - AZIZ, M. J. - ERTEKIN, E. - WILLIAMS, J. S. Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting. In APL MATERIALS. ISSN 2166-532X, 2019, vol. 7, no. 10. VIRTANEN, P. - BRAGGIO, A. - GIAZOTTO, F. Superconducting size effect in thin films under electric field: Mean-field self-consistent model. In PHYSICAL REVIEW B. ISSN 2469-9950, 2019, vol. 100, no. 22. HEIDER, Yannic - WILLMES, Philipp - HUCH, Volker - ZIMMER, Michael - SCHESCHKEWITZ, David. Boron and Phosphorus Containing Heterosiliconoids: Stable p- and n-Doped Unsaturated Silicon Clusters. In JOURNAL OF THE AMERICAN CHEMICAL SOCIETY. ISSN 0002-7863, 2019, vol. 141, no. 49, pp. 19498-19504. SONG, Zhi-Yong - SHANG, Liyan - HU, Zhigao - CHU, JunHao - CHEN, Ping-Ping - YAMAMOTO, Akio - KANG, Ting-Ting. InN superconducting phase transition. In SCIENTIFIC REPORTS. ISSN 2045-2322, 2019, vol. 9. AKIMITSU, Jun. Towards higher-T-c superconductors. In PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES. ISSN 0386-2208, 2019, vol. 95, no. 7, pp. 321-342. PRUCNAL, Slawomir - HEERA, Viton - HUEBNER, Rene - WANG, Mao - MAZUR, Grzegorz P. - GRZYBOWSKI, Michal J. - QIN, Xin - YUAN, Ye - VOELSKOW, Matthias - SKORUPA, Wolfgang - REBOHLE, Lars - HELM, Manfred - SAWICKI, Maciej - ZHOU, Shengqiang. Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium. In PHYSICAL REVIEW MATERIALS. ISSN 2475-9953, 2019, vol. 3, no. 5. LI, Xue - YONG, Xue - WU, Min - LU, Siyu - LIU, Hanyu - MENG, Sheng - TSE, John S. - LI, Yinwei. Hard BN Clathrate Superconductors. In JOURNAL OF PHYSICAL CHEMISTRY LETTERS. ISSN 1948-7185, 2019, vol. 10, no. 10, pp. 2554-2560. ROHANI, Parham - BANERJEE, Soham - SHARIFI-ASL, Soroosh - MALEKZADEH, Mohammad - SHAHBAZIAN-YASSAR, Reza - BILLINGE, Simon J. L. - SWIHART, Mark T. Synthesis and Properties of Plasmonic Boron-Hyperdoped Silicon Nanoparticles. In ADVANCED FUNCTIONAL MATERIALS. ISSN 1616-301X, 2019, vol. 29, no. 8. PAL, B. - JOSHI, B. P. - CHAKRABORTI, H. - JAIN, A. K. - BARICK, B. K. - GHOSH, K. - BHUNIA, S. - LAHA, A. - DHAR, S. - DAS GUPTA, K. Experimental evidence of a very thin superconducting layer in epitaxial indium nitride. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY. ISSN 0953-2048, 2019, vol. 32, no. 1. YE, Ruquan - JAMES, Dustin K. - TOUR, James M. Laser-Induced Graphene: From Discovery to Translation. In ADVANCED MATERIALS. ISSN 0935-9648, 2019, vol. 31, no. 1. PRUCNAL, Slawomir - REBOHLE, Lars - REICHEL, Denise. Semiconductor Applications. In Springer Series in Materials Science. ISSN 0933033X, 2019-01-01, 288, pp. 131-232. ROMANIN, D. Field-effect-induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: The case of (111) hydrogenated silicon. In NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS. ISSN 2037-4909, 2020, vol. 43, no. 4-5, pp. Dostupné na: https://doi.org/10.1393/ncc/i2020-20115-3. WU, Xuefeng - MING, Fangfei - SMITH, Tyler S. - LIU, Guowei - YE, Fei - WANG, Kedong - JOHNSTON, Steven - WEITERING, Hanno H. Superconductivity in a Hole-Doped Mott-Insulating Triangular Adatom Layer on a Silicon Surface. In PHYSICAL REVIEW LETTERS. ISSN 0031-9007, 2020, vol. 125, no. 11, pp. Dostupné na: https://doi.org/10.1103/PhysRevLett.125.117001. SKEREN, Tomas - KOESTER, Sigrun A. - DOUHARD, Bastien - FLEISCHMANN, Claudia - FUHRER, Andreas. Bipolar device fabrication using a scanning tunnelling microscope. In NATURE ELECTRONICS. ISSN 2520-1131, 2020, vol. 3, no. 9, pp. 524-530. Dostupné na: https://doi.org/10.1038/s41928-020-0445-5. RHIM, S. H. Coexistence of Ferromagnetism and Paramagnetism in Graphene with Boron-vacancy Complex. In JOURNAL OF MAGNETICS. ISSN 1226-1750, 2020, vol. 25, no. 2, pp. 313-317. Dostupné na: https://doi.org/10.4283/JMAG.2020.25.2.313. THORGRIMSSON, Brandur - MCJUNKIN, Thomas - MACQUARRIE, E. R. - COPPERSMITH, S. N. - ERIKSSON, M. A. The effect of external electric fields on silicon with superconducting gallium nano-precipitates. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, 2020, vol. 127, no. 21, pp. Dostupné na: https://doi.org/10.1063/5.0002460. MATSUMOTO, Ryo - ADACHI, Shintaro - SADKI, El Hadi S. - YAMAMOTO, Sayaka - TANAKA, Hiromi - TAKEYA, Hiroyuki - TAKANO, Yoshihiko. Maskless Patterning of Gallium-Irradiated Superconducting Silicon Using Focused Ion Beam. In ACS APPLIED ELECTRONIC MATERIALS. ISSN 2637-6113, 2020, vol. 2, no. 3, pp. 677-682. Dostupné na: https://doi.org/10.1021/acsaelm.9b00781. FLORES-LIVAS, Jose A. - BOERI, Lilia - SANNA, Antonio - PROFETA, Gianni - ARITA, Ryotaro - EREMETS, Mikhail. A perspective on conventional high-temperature superconductors at high pressure: Methods and materials. In PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS. ISSN 0370-1573, 2020, vol. 856, no., pp. 1-78. Dostupné na: https://doi.org/10.1016/j.physrep.2020.02.003. LIU, Chang - SONG, Xianqi - LI, Quan - MA, Yanming - CHEN, Changfeng. Superconductivity in Compression-Shear Deformed Diamond. In PHYSICAL REVIEW LETTERS. ISSN 0031-9007, 2020, vol. 124, no. 14, pp. Dostupné na: https://doi.org/10.1103/PhysRevLett.124.147001. DAT THANH LE - COLE, Jared H. - STACE, T. M. Building a bigger Hilbert space for superconducting devices, one Bloch state at a time. In PHYSICAL REVIEW RESEARCH, 2020, vol. 2, no. 1, pp. Dostupné na: https://doi.org/10.1103/PhysRevResearch.2.013245. NIROULA, A. - RAI, G. - HAAS, S. - KETTEMANN, S. Spatial BCS-BEC crossover in superconducting p-n junctions. In PHYSICAL REVIEW B. ISSN 2469-9950, 2020, vol. 101, no. 9, pp. Dostupné na: https://doi.org/10.1103/PhysRevB.101.094514. KORNICH, Viktoriia - VAVILOV, Maxim G. - FRIESEN, Mark - ERIKSSON, M. A. - COPPERSMITH, S. N. Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields. In PHYSICAL REVIEW B. ISSN 2469-9950, 2020, vol. 101, no. 12, pp. Dostupné na: https://doi.org/10.1103/PhysRevB.101.125414. LIANG, Xiaowei - BERGARA, Aitor - XIE, Yu - WANG, Linyan - SUN, Rongxin - GAO, Yufei - ZHOU, Xiang-Feng - XU, Bo - HE, Julong - YU, Dongli - GAO, Guoying - TIAN, Yongjun. Prediction of superconductivity in pressure-induced new silicon boride phases. In PHYSICAL REVIEW B. ISSN 2469-9950, 2020, vol. 101, no. 1, pp. Dostupné na: https://doi.org/10.1103/PhysRevB.101.014112. OKAZAKI, Hiroyuki - TERASHIMA, Kensei - BILLINGTON, David - IWATA, Keiji - WAKITA, Takanori - TANAKA, Masashi - TAKANO, Yoshihiko - MURAOKA, Yuji - YOKOYA, Takayoshi. Change in the electronic structure of the bismuth chalcogenide superconductor CsBi4-xPbxTe6 by dissociation of the bismuth dimers. In JOURNAL OF PHYSICS-CONDENSED MATTER. ISSN 0953-8984, 2020, vol. 32, no. 14, pp. Dostupné na: https://doi.org/10.1088/1361-648X/ab5e1a. HARTMANN, J. M. - FRAUENRATH, M. - RICHY, J. - VEILLEROT, M. Ultra-high boron doping of Si and Ge for nanoelectronics and photonics. In ECS Transactions. ISSN 19386737, 2020-01-01, 98, 5, pp. 203-214. Dostupné na: https://doi.org/10.1149/09805.0203ecst. ZHANG, Jurong - CHEN, Gang - LIU, Hanyu. Stable Structures and Superconductivity in a Y-Si System under High Pressure. In JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2021, vol. 12, no. 42, pp. 10388-10393. ISSN 1948-7185. Dostupné na: https://doi.org/10.1021/acs.jpclett.1c02853. LIU, Chang - SONG, Xianqi - LI, Quan - MA, Yanming - CHEN, Changfeng. Superconductivity in Shear Strained Semiconductors. In CHINESE PHYSICS LETTERS, 2021, vol. 38, no. 8, pp. ISSN 0256-307X. Dostupné na: https://doi.org/10.1088/0256-307X/38/8/086301. COSTA, F. J. R. - DE ALMEIDA, J. S. Superconductivity in highly doped diamond: Role of group III and V impurities. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 130, no. 4, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0055633. WANG ZONGYUAN - HU BIN - WU XUDONG. Research Progress of Laser Induced Graphene Technology. In LASER & OPTOELECTRONICS PROGRESS, 2021, vol. 58, no. 1, pp. ISSN 1006-4125. Dostupné na: https://doi.org/10.3788/LOP202158.0100003. OWEN, J. H. G. - CAMPBELL, Q. - SANTINI, R. - IVIE, J. A. - BACZEWSKI, A. D. - SCHMUCKER, S. W. - BUSSMANN, E. - MISRA, S. - RANDALL, J. N. Al-alkyls as acceptor dopant precursors for atomic-scale devices. In JOURNAL OF PHYSICS-CONDENSED MATTER, 2021, vol. 33, no. 46, pp. ISSN 0953-8984. Dostupné na: https://doi.org/10.1088/1361-648X/ac1ddf. ALAM, M. A. - SHAH, M. A. H. - NURUZZAMAN, M. - HADI, M. A. - PARVIN, F. - ZILANI, M. A. K. Effect of hydrostatic compression on physical properties of Li2TmSi3 (Tm = Ir, Pt, Rh, Os) with ground-state optical features. In JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2021, vol. 156, no., pp. ISSN 0022-3697. Dostupné na: https://doi.org/10.1016/j.jpcs.2021.110124. DHARMALINGAM, Priya - VENKATAKRISHNAN, Krishnan - TAN, Bo. Predicting Metastasis from Cues of Metastatic Cancer Stem-like Cells-3D-Ultrasensitive Metasensor at a Single-Cell Level. In ACS NANO, 2021, vol. 15, no. 6, pp. 9967-9986. ISSN 1936-0851. Dostupné na: https://doi.org/10.1021/acsnano.1c01436. MOUN, Monika - SIROHI, Anshu - SHEET, Goutam. Universality of Interfacial Superconductivity in Heavily Doped Silicon. In ACS APPLIED ELECTRONIC MATERIALS, 2021, vol. 3, no. 4, pp. 1594-1600. Dostupné na: https://doi.org/10.1021/acsaelm.0c01097. COSTA, F. J. R. - DE ALMEIDA, J. S. Theoretical investigation of superconductivity in diamond: Effects of doping and pressure. In JOURNAL OF APPLIED PHYSICS, 2021, vol. 129, no. 4, pp. ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0038667. CHIODI, Francesca - DAUBRIAC, Richard - KERDILÈS, Sébastien. Laser ultra-doped silicon: Superconductivity and applications. In Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics, 2021-01-01, pp. 357-400. Dostupné na: https://doi.org/10.1016/B978-0-12-820255-5.00009-X. TANG, C. - CHEN, Z. - WANG, Y.J. - XIAO, T.S. - LI, X. - ZHENG, C.L. - XU, X. - SUN, Z.Z. Atomic Editing Copper Twin Boundary for Precision COsub2/sub Reduction. In ACS CATALYSIS. ISSN 2155-5435, OCT 7 2022, vol. 12, no. 19, p. 11838-11844. TONG, Z.Y. - BU, M.X. - ZHANG, Y.Q. - YANG, D.R. - PI, X.D. Hyperdoped silicon: Processing, properties, and devices. In JOURNAL OF SEMICONDUCTORS. ISSN 1674-4926, SEP 1 2022, vol. 43, no. 9. MOUN, M. - SHEET, G. Superconductivity in silicon. In SUPERCONDUCTOR SCIENCE & TECHNOLOGY. ISSN 0953-2048, AUG 1 2022, vol. 35, no. 8. XI, B. - TSE, K.F. - KOK, T.F. - CHAN, H.M. - CHAN, M.K. - CHAN, H.Y. - WONG, K.Y.C. - YUEN, S.H.R. - ZHU, J.Y. Machine-Learning-Assisted Acceleration on High-Symmetry Materials Search: Space Group Predictions from Band Structures. In JOURNAL OF PHYSICAL CHEMISTRY C. ISSN 1932-7447, JUL 28 2022, vol. 126, no. 29, p. 12264-12273. LOU, P.C. - KATAILIHA, A. - BHARDWAJ, R.G. - BEYERMANN, W.P. - MOHATA, D. - KUMAR, S. Flexoelectronic doping of degenerate silicon and correlated electron behavior. In PHYSICAL REVIEW B. ISSN 2469-9950, JUN 10 2022, vol. 105, no. 24. BONNET, P. - CHIODI, F. - FLANIGAN, D. - DELAGRANGE, R. - BROCHU, N. - DéBARRE, D. - LE SUEUR, H. Strongly Nonlinear Superconducting Silicon Resonators. In PHYSICAL REVIEW APPLIED. ISSN 2331-7019, MAR 23 2022, vol. 17, no. 3. CAMPBELL, Quinn - BACZEWSKI, Andrew D. - BUTERA, R. E. - MISRA, Shashank. Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 × 1. In AVS Quantum Science, 2022-03-01, 4, 1, pp. Dostupné na: https://doi.org/10.1116/5.0075467. TARENKOV, V. - SHAPOVALOV, A. - LYAKHNO, V. - SHAMAEV, V. - ZHITLUKHINA, E. Point-Contact Spectroscopy of Mo/Si Superlattices. In Journal of Nano- and Electronic Physics, 2022-01-01, 14, 6, pp. ISSN 20776772. Dostupné na: https://doi.org/10.21272/jnep.14(6).06025. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2006 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1038/nature05340 článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2006 2005 29.273 Q1 10.333 Q1
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