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Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition
Názov Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition Autor Chromik Štefan 1949 SAVELEK - Elektrotechnický ústav SAV ORCID Spoluautori Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV ORCID Vretenár Viliam 1976 Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ORCID Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Hulman Martin 1967 SAVELEK - Elektrotechnický ústav SAV ORCID Zdroj.dok. Applied Surface Science. Vol. 395 (2017), p. 232-236 Jazyk dok. eng - angličtina Druh dok. rozpis článkov z periodík (rbx) Ohlasy HAO, L.Z. - LIU, Y.J. - DU, Y.J. - CHEN, Z.Y. - HAN, Z.D. - XU, Z.J. - ZHU, J. In NANOSCALE RESEARCH LETTERS. OCT 17 2017, vol. 12. LI, D.H. - SONG, X.F. - XU, J.P. - WANG, Z.Y. - ZHANG, R.J. - ZHOU, P. - ZHANG, H. - HUANG, R.Z. - WANG, S.Y. - ZHENG, Y.X. - ZHANG, D.W. - CHEN, L.Y. In APPLIED SURFACE SCIENCE. NOV 1 2017, vol. 421, B, SI, p. 884-890. WANG, W.L. - YANG, Z.C. - LU, Z.Y. - LI, G.Q. High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors. In JOURNAL OF MATERIALS CHEMISTRY C. JUL 7 2018, vol. 6, no. 25, p. 6641-6646. ROZENFELD, S. - TELLER, H. - SCHECHTER, M. - FARBER, R. - KRICHEVSKI, O. - SCHECHTER, A. - CAHAN, R. Exfoliated molybdenum di-sulfide (MoS2) electrode for hydrogen production in microbial electrolysis cell. In BIOELECTROCHEMISTRY. OCT 2018, vol. 123, p. 201-210. YAO, J.D. - ZHENG, Z.Q. - YANG, G.W. Ultrasensitive 2D/3D Heterojunction Multicolor Photodetectors: A Synergy of Laterally and Vertically Aligned 2D Layered Materials. In ACS APPLIED MATERIALS & INTERFACES. NOV 7 2018, vol. 10, no. 44, p. 38166-38172. BANDAY, Summera - WANI, M. F. Nanoscratch Resistance and Nanotribological Performance of Ti/MoS2 Coating on Al-Si Alloy Deposited by Pulse Laser Deposition Technique. In JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME. ISSN 0742-4787, 2019, vol. 141, no. 2, pp. WU, Z. - JIE, W. - YANG, Z. - HAO, J. Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials. In MATERIALS TODAY NANO. ISSN 2588-8420, DEC 2020, vol. 12. YANG, G.F. - DING, Y. - LU, N.Y. - XIE, F. - GU, Y. - YE, B.J. - YAO, Y.F. - ZHANG, X.M. - HUO, X.X. Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method. In IEEE PHOTONICS JOURNAL. ISSN 1943-0655, DEC 2021, vol. 13, no. 6. YADAV, G. - GUPTA, R. - SHARMA, A. - TOMAR, M. Optical properties of LMBE grown c-axis oriented GaN thin films using Surface Plasmon Resonance technique. In OPTICAL MATERIALS. ISSN 0925-3467, SEP 2022, vol. 131. Dostupné na: https://doi.org/10.1016/j.optmat.2022.112603. GIANNAZZO, F. - PANASCI, S.E. - SCHILIRO, E. - GRECO, G. - ROCCAFORTE, F. - SFUNCIA, G. - NICOTRA, G. - CANNAS, M. - AGNELLO, S. - FRAYSSINET, E. - CORDIER, Y. - MICHON, A. - KOOS, A. - PECZ, B. Atomic resolution interface structure and vertical current injection in highly uniform MoSsub2/sub heterojunctions with bulk GaN. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, SEP 15 2023, vol. 631. Dostupné na: https://doi.org/10.1016/j.apsusc.2023.157513. Kategória ADCA - Vedecké práce v zahraničných karentovaných časopisoch impaktovaných Kategória (od 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Typ výstupu článok Rok vykazovania 2017 Registrované v WOS Registrované v SCOPUS Registrované v CCC DOI 10.1016/j.apsusc.2016.06.038 
článok
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2017 2016 3.387 Q1 0.958 Q1
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